Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation
Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation
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DOI：
10.1063/1.3432404
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发表时间：
2010-05
影响因子：
4
通讯作者：
D. Okamoto;H. Yano;T. Hatayama;T. Fuyuki
中科院分区：
文献类型：
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作者：
D. Okamoto;H. Yano;T. Hatayama;T. Fuyuki
研究了SiO2/4 H-SiC（0001）结构中引入磷元素对近界面陷阱（NITs）的去除效果。采用低温电容电压和热介电弛豫电流测量方法研究了干氧化、NO退火和POCl 3退火制备的氧化物中的NITs。这两个测量结果表明，在POCl 3退火的氧化物中的NITs中捕获的电子密度小于干燥和NO退火的氧化物。在4 H-SiC金属氧化物半导体场效应晶体管中，NIT的急剧消除降低了界面态密度并增加了沟道迁移率。
Effective removal of near-interface traps (NITs) in SiO2/4H–SiC (0001) structures through phosphorus incorporation is demonstrated in this paper. Low-temperature capacitance-voltage and thermal dielectric relaxation current measurements were employed to investigate NITs in oxides prepared by dry oxidation, NO annealing, and POCl3 annealing. Both the measurements revealed that the density of electrons trapped in NITs in POCl3-annealed oxide is smaller than that in dry and NO-annealed oxides. The drastic elimination of NITs lowers the interface state density and increases the channel mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors.