Tunneling Anomalous and Spin Hall Effects
Tunneling Anomalous and Spin Hall Effects
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DOI：
10.1103/physrevlett.115.056602
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发表时间：
2015-07-30
影响因子：
8.6
通讯作者：
Fabian, J.
中科院分区：
文献类型：
--
作者：
Matos-Abiague, A.;Fabian, J.
我们从理论上预测，当隧道电流流过一个只有一个电极是磁性的隧道结时，反常霍尔效应的存在。存在于势垒区的界面自旋轨道耦合在垂直于隧穿电流的方向上诱导自旋相关动量滤波，即使在没有杂质的情况下也会导致斜隧穿。当在隧道异质结上施加偏置电压时，会在非磁性电极中产生异常的霍尔电导和自旋霍尔电流。如果势垒由非中心对称材料组成，则反常霍尔电导和自旋霍尔电流在磁化和晶体学方向上都是各向异性的，这使我们能够将这种界面现象与体反常霍尔和自旋霍尔贡献分开。所提出的效应对于证明和量化金属和金属半导体系统中的界面自旋轨道场是有用的。
We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.