Auto-Split Laser Lift-Off Technique for Vertical-Injection GaN-Based Green Light-Emitting Diodes
Auto-Split Laser Lift-Off Technique for Vertical-Injection GaN-Based Green Light-Emitting Diodes
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DOI：
10.1109/jphot.2013.2274768
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发表时间：
2013-07
影响因子：
2.4
通讯作者：
M. Chen;B. Zhang;L. Cai;J. Y. Zhang;L. Ying;X. Lv
中科院分区：
文献类型：
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作者：
M. Chen;B. Zhang;L. Cai;J. Y. Zhang;L. Ying;X. Lv
介绍了一种用于制备垂直注入氮化镓基绿色发光二极管（asv - led）的自分裂激光提升（LLO）方法。与传统的蓝宝石led相比，asv led在光输出和散热方面有了显著的改善。采用Frank-Read位错聚类模型研究了自裂LLO技术的内在物理机制。激光能量密度和台面间距是影响自分裂LLO方法的关键因素。相信这种方法提供了一种制造高性能gan基薄膜led的替代方法。
An auto-split laser lift-off (LLO) method for fabrication of vertical-injection GaN-based green light-emitting diodes (ASV-LEDs) is demonstrated. The ASV-LEDs exhibited a significant improvement in the light output and thermal dissipation, as compared with that of conventional LEDs on sapphire. The intrinsic physical mechanism of the auto-split LLO technique is studied by a Frank-Read dislocation clustering model. The laser energy density and mesa spacing are shown to be key factors in the auto-split LLO method. It is believed that this method offers an alternative way to fabricate high-performance GaN-based thin-film LEDs.