Sol-gel preparation of poly(ethylene glycol) doped indium tin oxide thin films for sensing applications
Sol-gel preparation of poly(ethylene glycol) doped indium tin oxide thin films for sensing applications
复制标题
DOI：
10.1016/j.optmat.2004.01.018
复制
发表时间：
2004-06-01
影响因子：
3.9
通讯作者：
O'Shea, S
中科院分区：
文献类型：
--
作者：
Zhang, J;Au, KH;O'Shea, S
通过溶胶-凝胶工艺在玻璃或氧化硅基板上沉积氧化铟锡（ITO）薄膜。通过将乙酰丙酮中的无水三氯化铟和乙醇中的氯化锡(IV)混合来制备溶胶。通过在空气中以不同温度和不同时间间隔进行热处理，制备了重量百分比为10%的Sn掺杂氧化铟（ITO）薄膜，其中作为添加剂添加的聚合物聚乙二醇（PEG）的量发生变化。研究了所得 ITO 薄膜的形态、结构、光学和电学性能。 X射线衍射（XRD）结果表明，与未掺杂的相比，PEG的引入降低了峰强度。 SEM 和 AFM 研究表明，与未掺杂的相比，PEG 掺杂的薄膜还具有更平坦的表面。电学和光学测试表明，PEG的掺杂可以提高波长350-700 nm的光学透过率（约3%至5%），并降低薄层电阻。低温制备的ITO薄膜已被用作有毒气体检测的气敏材料。 (C) 2004 Elsevier B.V. 保留所有权利。
Indium tin oxide (ITO) thin films were deposited on glass or oxidized silicon substrates by sol-gel process. The sol was prepared by mixing the anhydrous indium trichloride in acetylacetone and tin (IV) chloride in ethanol. Ten percent by weight Sn-doped indium oxide (ITO) films with variation of the amount of polymer poly(ethylene glycol), PEG, added as additives were prepared by heat treatment in air at different temperature and different time intervals. The morphological, structural, optical, and electrical properties of the resulted ITO films were investigated. X-ray diffraction (XRD) results showed that the introduction of PEG lowered the intensity peaks as compared to that of the undoped ones. The SEM and AFM investigations indicated that the PEG doped thin films also result in a flatter surface compared to the undoped. The electrical and optical testings revealed that the doping of PEG could lead to increased optical transmittance rate (similar to3% to 5%) with wavelength 350-700 nm and decreased sheet resistance. The ITO thin films prepared under low temperature had been employed as gas sensitive material for poisonous gas detection. (C) 2004 Elsevier B.V. All rights reserved.