Berry phase manipulation in ultrathin SrRuO3 films
Berry phase manipulation in ultrathin SrRuO3 films
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DOI：
10.1103/physrevb.102.220406
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发表时间：
2019-07
期刊：
影响因子：
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通讯作者：
Liang Wu;Fangdi Wen;Yixing Fu;Justin H. Wilson;Xiaoran Liu;Yujun Zhang;D. Vasiukov;M. Kareev;J. Pixley;J. Chakhalian
中科院分区：
文献类型：
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作者：
Liang Wu;Fangdi Wen;Yixing Fu;Justin H. Wilson;Xiaoran Liu;Yujun Zhang;D. Vasiukov;M. Kareev;J. Pixley;J. Chakhalian
Berry相的概念是一种强有力的手段来揭示拓扑结构在手性磁性材料和结构中观察到的各种新现象中的重要作用。一个著名的例子是由动量空间中的非零Berry相位驱动的内禀反常霍尔效应（AHE）。由于AHE高度依赖于费米边缘附近的能带结构的细节，Berry相和AHE可以在其化学势可通过维度和无序调节的薄膜中改变。在这里，我们表明，在SrRuO$_3$膜的Berry相可以有效地操纵的影响，无序的内在Berry相的贡献AHE，这是证实了我们的数值精确计算。此外，我们的研究结果提供了充分的实验证据的拓扑霍尔效应归因于受保护的自旋织构的表面性质，而不是借给强有力的支持，多通道AHE方案在SrRuO$_3$。
A notion of the Berry phase is a powerful means to unravel the non-trivial role of topology in various novel phenomena observed in chiral magnetic materials and structures. A celebrated example is the intrinsic anomalous Hall effect (AHE) driven by the non-vanishing Berry phase in the momentum space. As the AHE is highly dependent on details of the band structure near the Fermi edge, the Berry phase and AHE can be altered in thin films whose chemical potential is tunable by dimensionality and disorder. Here, we demonstrate that in ultrathin SrRuO$_3$ films the Berry phase can be effectively manipulated by the effects of disorder on the intrinsic Berry phase contribution to the AHE, which is corroborated by our numerically exact calculations. In addition, our findings provide ample experimental evidence for the superficial nature of the topological Hall effect attribution to the protected spin texture and instead lend strong support to the multi-channel AHE scenario in ultrathin SrRuO$_3$.