Experimental observation of bulk band dispersions in the oxide semiconductor ZnO using soft x-ray angle-resolved photoemission spectroscopy
Experimental observation of bulk band dispersions in the oxide semiconductor ZnO using soft x-ray angle-resolved photoemission spectroscopy
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DOI：
10.1063/1.3116223
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发表时间：
2009-06-15
影响因子：
3.2
通讯作者：
Tabata, H.
中科院分区：
文献类型：
--
作者：
Kobayashi, M.;Song, G. S.;Tabata, H.
The electronic structure of the oxide semiconductor ZnO has been investigated using soft x-ray angle-resolved photoemission spectroscopy (ARPES). The obtained band dispersions within the k(x)-k(y) planes reflect the symmetry of the Brillouin zone and show no surface-state-derived flat bands. Band dispersions along the k(z) direction have also been observed. The obtained band dispersions qualitatively agree with band-structure calculations except for the bandwidth. The observations provide experimental evidence that soft x-ray ARPES enables us to study the bulk band structure of semiconductors. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3116223]
