Efficient Activation of As Atoms in Ultra Shallow Junction by Thermal Plasma Jet Induced Microsecond Annealing
Efficient Activation of As Atoms in Ultra Shallow Junction by Thermal Plasma Jet Induced Microsecond Annealing
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通过热等离子射流诱导微秒退火有效激活超浅结中的 As 原子
DOI:
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发表时间:
2010
期刊:
影响因子:
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通讯作者:
S.Miyazaki
中科院分区:
文献类型:
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作者:
K.Matsumoto;S.Higashi;A.Ohta;H.Murakami;S.Miyazaki