Valley splitting in the transition-metal dichalcogenide monolayer via atom adsorption
Valley splitting in the transition-metal dichalcogenide monolayer via atom adsorption
复制标题
通过原子吸附在过渡金属二硫属化物单层中进行谷分裂
DOI：
10.1039/c6nr05710a
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发表时间：
2017-02-14
期刊：
影响因子：
6.7
通讯作者：
Qi, Jingshan
中科院分区：
文献类型：
--
作者：
Chen, Xiaofang;Zhong, Liangshuai;Qi, Jingshan
本文用第一性原理方法研究了过渡金属二硫属化物单分子膜的谷简并分裂。当过渡金属原子吸附在单层膜表面时，系统中引入了局域磁矩。过渡金属原子局域磁矩引起的塞曼效应提高了谷简并度。当我们只能激发一个谷的载流子时，由于谷分裂，可以获得反常电荷、自旋和谷霍尔效应。谷分裂取决于磁化方向，因此可以通过外部磁场连续调谐。这种可调谷分裂提供了一个实用的途径，探索基于自旋和谷自由度的设备范例。
In this letter we study the valley degeneracy splitting of the transition-metal dichalcogenide monolayer by first-principles calculations. The local magnetic moments are introduced into the system when the transition- metal atoms are adsorbed on the monolayer surface. The Zeeman effect arising from the local magnetic moment at transition-metal atom sites lifts the valley degeneracy. Anomalous charge, spin and valley Hall effects can be accessed due to valley splitting when we can only excite carriers of one valley. The valley splitting depends on the direction of magnetization and thus can be tuned continuously by an external magnetic field. This tunable valley splitting offers a practical avenue for exploring device paradigms based on the spin and valley degrees of freedom.