Quantized escape and formation of edge channels at high Landau levels and edge transport mediated zero-differential resistance states
Quantized escape and formation of edge channels at high Landau levels and edge transport mediated zero-differential resistance states
复制标题
高朗道水平下的量子逃逸和边缘通道的形成以及边缘传输介导的零微分电阻状态
DOI：
10.1103/physrevb.90.045301
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发表时间：
2014
影响因子：
3.7
通讯作者：
Chepelianskii A
中科院分区：
文献类型：
--
作者：
Chepelianskii A
我们提出了一种超高迁移率二维电子气体的非局部电阻测量方法。我们的实验表明，即使在弱磁场下，沿着边缘的经典引导在宏观距离上也会产生很强的非局部电阻。在这种高朗道能级状态下，沿边缘的输运是耗散的，可以通过沿边缘的电压降的幅度来控制。我们报告了非局部输运中的共振作为该电压的函数，被解释为逃逸和边缘通道的形成，以及当非局部电压在远大于平均自由程的长度尺度上测量时零差分电阻状态的形成。
We present nonlocal resistance measurements in an ultrahigh-mobility two-dimensional electron gas. Our experiments show that even at weak magnetic fields, classical guiding along edges leads to a strong nonlocal resistance on macroscopic distances. In this high Landau level regime, the transport along edges is dissipative and can be controlled by the amplitude of the voltage drop along the edge. We report resonances in the nonlocal transport as a function of this voltage that are interpreted as escape and formation of edge channels, and the formation of zero-differential resistance states when the nonlocal voltage is measured on length scales much larger than the mean free path.