Design, Fabrication, and Characterization of Dense Compressible Microinterconnects
Design, Fabrication, and Characterization of Dense Compressible Microinterconnects
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DOI：
10.1109/tcpmt.2017.2688281
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发表时间：
2017-05
期刊：
影响因子：
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通讯作者：
Paul K. Jo;Muneeb Zia;Joe L. Gonzalez;Hanju Oh;M. Bakir
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文献类型：
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作者：
Paul K. Jo;Muneeb Zia;Joe L. Gonzalez;Hanju Oh;M. Bakir
本文介绍了金钝化NiW可压缩微互连（CMI），其高度为75 μ m $，线间距为150 μ m $。CMI采用CMOS兼容工艺批量制造。制造的CMI具有高达13.12 mm/N的测量顺应性，并表现出45 μ m $的弹性垂直运动范围。此外，CMI被示出为在几次偏转之后返回到它们的原始几何轮廓，并且因此能够始终保持与它们的对应垫的接触。测得的CMI的四点电阻（包括接触电阻）低至176.3 $\text{m}\Omega $。
This paper presents gold passivated NiW compressible microinterconnects (CMIs) with $75~\mu \text{m}$ height and $150~\mu \text{m}$ in-line pitch. The CMIs are batch fabricated using CMOS-compatible processes. The fabricated CMIs have a measured compliance of up to 13.12 mm/N and demonstrate $45~\mu \text{m}$ elastic vertical range of motion. Moreover, the CMIs are shown to return to their original geometrical profile after several deflections and consequently are able to maintain contact with their corresponding pads at all times. The measured four-point resistance of a CMI, which includes contact resistance, is as low as 176.3 $\text{m}\Omega $ .