Design and optimization of a monolithically integratable InP-based optical waveguide isolator
Design and optimization of a monolithically integratable InP-based optical waveguide isolator
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单片集成InP基光波导隔离器的设计与优化
DOI：
10.1364/josab.24.000094
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发表时间：
2007
影响因子：
1.9
通讯作者：
R. Baets
中科院分区：
文献类型：
--
作者：
M. Vanwolleghem;P. Gogol;P. Beauvillain;W. Parys;R. Baets
对一种新型1.3 μm单片集成InP基光波导隔离器的层结构进行了优化设计。该组件的概念是基于通过将SOA与横向磁化的铁磁金属接触接触，充分接近SOA的引导和放大核心，在标准半导体光放大器（SOA）结构中引入非互易损耗-增益行为。由此引起的非互易复杂的横向克尔移位的有效指数的引导TM模式，结合适当的电流注入，允许向前的透明度和向后的光学消光。我们引入了两种不同的优化标准，找到最佳的SOA层结构，使用两种不同的品质因数函数（FoM）的设备性能。还比较了CoxFe 1 −x（x= 0，50，90）铁磁过渡金属合金系统的三种不同组成的器件性能。发现等原子（或准等原子）CoFe合金最适合于这种应用。根据所使用的FoM，两个技术上可行的设计，提出了一个真正的单片集成光波导隔离器。它还表明，这些设计是稳健的层厚度和波长的变化。最后，我们推导出了一个解析表达式，给出了一个更好的洞察铁磁金属包层SOA隔离器的金属参数方面的极限性能。
The optimization design of the layer structure for a novel type of a 1.3 μm monolithically integrated InP-based optical waveguide isolator is presented. The concept of this component is based on introducing a nonreciprocal loss-gain behavior in a standard semiconductor optical amplifier (SOA) structure by contacting the SOA with a transversely magnetized ferromagnetic metal contact, sufficiently close to the guiding and amplifying core of the SOA. The thus induced nonreciprocal complex transverse Kerr shift on the effective index of the guided TM modes, combined with a proper current injection, allows for forward transparency and backward optical extinction. We introduce two different optimization criteria for finding the optimal SOA layer structure, using two different figure-of-merit functions (FoM) for the device performance. The device performance is also compared for three different compositions of the CoxFe1−x(x=0,50,90) ferromagnetic transition metal alloy system. It is found that equiatomic (or quasi-equiatomic) CoFe alloys are the most suitable for this application. Depending on the used FoM, two technologically practical designs are proposed for a truly monolithically integrated optical waveguide isolator. It is also shown that these designs are robust with respect to variations in layer thicknesses and wavelength. Finally, we have derived an analytical expression that gives a better insight in the limit performance of a ferromagnetic metal-clad SOA-isolator in terms of metal parameters.
首次演示可集成光隔离器的 InGaAsP/InP 有源波导中的 TE 模式不可逆传播
DOI：
--
发表时间：
2004
期刊：
Japanese Journal of Applied Physics, (Express Letter) vol.43, no.12A, pt.2
影响因子：
--
作者：
Hiromasa Shimizu;Yoshiaki Nakano
通讯作者：
Yoshiaki Nakano