Effects of interface charges on imprint of epitaxial Bi4Ti3O12 thin films
Effects of interface charges on imprint of epitaxial Bi4Ti3O12 thin films
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DOI：
10.1063/1.118497
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发表时间：
1997-03
影响因子：
4
通讯作者：
Byung-Eun Park;T. Noh;J. Lee;C. Kim;W. Jo
中科院分区：
文献类型：
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作者：
Byung-Eun Park;T. Noh;J. Lee;C. Kim;W. Jo
以La0.5Sr0.5CoO3(LSCO)或Pt膜为底电极层，采用脉冲激光沉积法在MgO(001)衬底上生长了Bi4Ti3O12(BTO)外延薄膜。对称的铂/BTO/铂电容器结构表现出惊人的大的非对称极化切换行为，而铂/BTO/LSCO结构具有近乎对称的P-V滞后。铂/BTO/铂的强烈不对称行为归因于底部BTO/铂界面互扩散产生的正电荷。使用多种顶电极材料的P-V滞后研究和俄歇电子能谱深度分布测量也支持界面电荷的形成。压印脉冲测试表明，这种压印故障不能通过施加直流偏置场来恢复。
Using La0.5Sr0.5CoO3 (LSCO) or Pt film as a bottom electrode layer, epitaxial Bi4Ti3O12 (BTO) thin films were grown on MgO(001) substrates by pulsed laser deposition. A symmetric Pt/BTO/Pt capacitor structure shows a surprisingly large asymmetric polarization switching behavior, but a Pt/BTO/LSCO structure has a nearly symmetric P–V hysteresis. The strong asymmetric behavior in the Pt/BTO/Pt was attributed to positive charges resulting from interdiffusion at the bottom BTO/Pt interface. P–V hysteresis studies using numerous top electrode materials and Auger electron spectroscopy depth profile measurement also support formation of interfacial charges. Imprint pulse test shows that such an imprint failure cannot be recovered by applying a dc bias field.