Synthesis and Characterization of In-Doped ZnO Planar Superlattice Nanoribbons
Synthesis and Characterization of In-Doped ZnO Planar Superlattice Nanoribbons
复制标题
掺杂ZnO平面超晶格纳米带的合成与表征
DOI：
10.1021/jp810158u
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发表时间：
2009-03
影响因子：
3.7
通讯作者：
Han, XH
中科院分区：
文献类型：
--
作者：
Lee, ST;Jie, JS;Li, DP;Wang, GZ;Han, XH
超晶格纳米线和纳米带根据它们的超晶格堆叠方向被分类为轴向超晶格纳米线和横向超晶格和平面超晶格纳米带。我们分析了这些超晶格结构的不同衍射构型对X射线衍射（XRD）和选区电子衍射结果的依赖性。通过XRD和截面透射电子显微镜研究，我们确定了In掺杂ZnO纳米带中平面超晶格结构的形成。In掺杂ZnO超晶格纳米带是由In/Zn-O和In-O沿着ZnO（001）方向交替堆叠而成，形成了以（001）极性面为宽表面的纳米晶。
Superlattice nanowires and nanoribbons are categorized as axial superlattice nanowires and lateral superlattice and planar superlattice nanoribbons according to their superlattice stacking directions. We analyze the dependence of X-ray diffraction (XRD) and select-area electron diffraction results on the different diffraction configurations of these superlattice structures. By use of the analysis, we have identified the formation of planar superlattice structures in In-doped ZnO nanoribbons by XRD and cross section transmission electron microscopy investigations. The In-doped ZnO superlattice nanoribbons are formed by alternately stacking layers of In/Zn-O and In-O along ZnO (001) direction, resulting in a nanoribbon with (001) polar surface as its wide surface.