Thermoelectric performance of restacked MoS2 nanosheets thin-film
Thermoelectric performance of restacked MoS2 nanosheets thin-film
复制标题
重新堆叠MoS2纳米片薄膜的热电性能
DOI：
10.1088/0957-4484/27/28/285703
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发表时间：
2016
期刊：
影响因子：
3.5
通讯作者：
Jiang Fengxing
中科院分区：
文献类型：
--
作者：
Wang Tongzhou;Liu Congcong;Xu Jingkun;Zhu Zhengyou;Liu Endou;Hu Yongjing;Li Changcun;Jiang Fengxing
MoS2具有较大的本征禁带宽度和较高的载流子迁移率，有望成为一种优良的热电材料。在本工作中，我们用锂插层的方法剥离了块状MoS_2，并用简单的过滤技术制备了重新堆积的MoS_2薄膜。不同厚度的MoS2薄膜表现出不同的热电性能。结果表明，随着薄膜厚度的增加，载流子浓度、电导率和塞贝克系数都呈现增加的趋势。特别是最大塞贝克系数可达93.5μV K−1。这一高的热电势表明，通过结构优化，MoS2将具有理想的热电性能。在本实验中计算了最高优良率(ZT=0.01)。
MoS 2 has been predicted to be an excellent thermoelectric material due to its large intrinsic band gap and high carrier mobility. In this work, we exfoliated bulk MoS 2 by the assistance of lithium intercalation and fabricated the restacked MoS 2 thin-film using a simple filtration technique. These MoS 2 thin-films with different thickness showed different thermoelectric performance. It was found that with the increase of thickness, carrier concentration, electrical conductivity and Seebeck coefficient all showed an increasing trend. In particular, the maximum Seebeck coefficient was able to reach 93.5 μV K− 1. This high thermopower indicates that MoS 2 will have ideal thermoelectric performance in the future through optimizing its structure. The highest figure of merit (ZT= 0.01) is calculated in this experiment.