Facile self-supporting and flexible Cu2S/PEDOT:PSS composite thermoelectric film with high thermoelectric properties for body energy harvesting
Facile self-supporting and flexible Cu2S/PEDOT:PSS composite thermoelectric film with high thermoelectric properties for body energy harvesting
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DOI：
10.1016/j.rinp.2021.105061
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发表时间：
2021-11-29
影响因子：
5.3
通讯作者：
Xue, Chenyang
中科院分区：
文献类型：
--
作者：
Liu, Dan;Yan, Zhuqing;Xue, Chenyang
采用真空抽滤法制备了自支撑柔性Cu 2S/聚（3，4-乙撑二氧噻吩）：聚苯乙烯磺酸盐（PEDOT：PSS）复合热电薄膜。研究了Cu 2S含量和冷压压力对复合薄膜热电性能的影响。Cu 2S/PEDOT：PSS复合膜的电导率随Cu 2S含量的增加和温度的升高而降低，而Seebeck系数随温度的升高而降低。同时，Cu 2S/PEDOT：PSS复合膜的电导率随温度的升高而降低，Seebeck系数随温度的升高而升高。当Cu 2S含量为10wt%时，复合膜的最大功率因数（PF）为56.15 μ Wm（-1）K（-2）。经2 MPa或4 MPa冷压处理后，10wt%复合膜的PF增强了2倍。在弯曲半径为4 mm的条件下，冷压复合薄膜弯曲1000次后，电阻仅增加10%，显示出良好的柔韧性。在温差为30 K时，由4条冷压10 wt%复合薄膜制备的TE发电器的开路电压和最大输出功率分别为2.3 mV和23.06 nW，具有为低功耗可穿戴电子设备供电的良好潜力。
The self-supporting and flexible Cu2S/poly(3,4-ethylene dioxythiophene):-poly(styrene sulfonate) (PEDOT:PSS) composite thermoelectric films were prepared by vacuum filtration method. The effects of Cu2S content and the pressure of cold-pressing on the thermoelectric properties of composite films were studied. The electrical conductivities of Cu2S/PEDOT:PSS composite films would decrease with the increase of Cu2S content and temperature, while the Seebeck coefficients had an inverse tendency. At the same time, the electrical conductivities and Seebeck coefficients of the Cu2S/PEDOT:PSS composite films will decrease and increases with the increase of temperature, respectively. The maximum power factor (PF) of composite films was 56.15 mu Wm(-1)K(-2) when Cu2S content was 10 wt% at 393 K. After cold-pressing at 2 MPa or 4 MPa, the PF of 10 wt% composite film was enhanced by two times. The resistance of the cold-pressed composite film would rise only 10 % after bending 1000 cycles under a bending radius of 4 mm, showing good flexibility. The open-circuit voltage and maximum output power were 2.3 mV and 23.06 nW for the TE generator fabricated by four strips of cold-pressed 10 wt% composite film at the temperature difference of 30 K, respectively, which has a good potential to power the lowpower consumption wearable electronic devices.