Si(111) surface structures by glancing-incidence high-energy electron diffraction
Si(111) surface structures by glancing-incidence high-energy electron diffraction
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通过掠射高能电子衍射观察 Si(111) 表面结构
DOI：
10.1107/s0567739472000014
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发表时间：
1972
期刊：
影响因子：
--
通讯作者：
J. F. Menadue
中科院分区：
文献类型：
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作者：
J. F. Menadue
在超高真空条件下，用掠入射高能电子衍射研究了硅单晶（111）表面形成的结构。从2到7阶的Bragg反射的hhh系统集的强度的定量测量被观察到作为方位角，摇摆角和温度的函数。特别地，在最小化非系统n束干涉的晶体方位角处测量了hhh反射的强度。比较和讨论了1 × 1,7和√19结构的这些“与方位角无关”的摇摆曲线，以探索通过掠入射高能技术获得表面和体结构信息的可能性。这些数据适合与n梁动力学理论的计算进行比较，因为它是发展和适应布拉格情况的。Bragg峰的折射位移为硅的平均内电位12.0±0.4伏。
The structures which form on the (111) surface of a silicon single crystal have been examined by glancing incidence high-energy electron diffraction under ultra-high vacuum conditions. A quantitative measurement of the intensities of the hhh systematic set of Bragg reflections from the 2nd to the 7th order was observed as a function of azimuthal angle, rocking angle and temperature. In particular, the intensity of the hhh reflections was measured at crystal azimuths which minimize the non-systematic n-beam interference. These `azimuth-independent' rocking curves for the 1 × 1, 7 and √19 structures are compared and discussed, to explore the possibilities of obtaining structural information for both the surface and the bulk by the glancing incidence high energy technique. The data are suitable for comparison with the calculations of an n-beam dynamical theory as it is developed and adapted to the Bragg case. The refractive shift of the Bragg peaks yielded a value of 12.0 ± 0.4 volts for the mean inner potential of silicon.