Anisotropic etching by electrospray for reduction in parasitic resistance of organic field-effect transistors
Anisotropic etching by electrospray for reduction in parasitic resistance of organic field-effect transistors
复制标题
通过电喷雾进行各向异性蚀刻以降低有机场效应晶体管的寄生电阻
DOI:
10.1016/j.orgel.2022.106673
复制
发表时间:
2023
影响因子:
3.2
通讯作者:
and Rei Mizoguchi
中科院分区:
文献类型:
--
作者:
Norio Onojima;Sayaka Hiruta;Masahiro Kashiwazaki;Masaki Kobayashi;and Rei Mizoguchi
Productive manufacturing that uses a roll-to-roll process, called printed electronics, is highly demanded for low-cost, large-area, and high-speed fabrication of organic devices. However, although most studies on the printing process have been focused on the deposition of films, few studies are reported on solution methods for anisotropic etching that are compatible with the printing process. Studying anisotropic etching by using a wet process is a matter of great importance for the further development of printed electronics. Here, we conduct anisotropic etching by using an electrospray method, one of the wet processes, on an underlying active layer beneath source and drain electrodes and demonstrate a reduction in the parasitic resistance of organic field-effect transistors. The same equipment for the etching as the deposition of films was consistently used. Therefore, this study will pave the way for sophisticating printed electronics.