Influence of the depletion region in GaAs/AlGaAs quantum well nanowire photodetector
Influence of the depletion region in GaAs/AlGaAs quantum well nanowire photodetector
复制标题
GaAs/AlGaAs量子阱纳米线光电探测器中耗尽区的影响
DOI：
10.1088/1361-6528/aba02c
复制
发表时间：
2020
期刊：
影响因子：
3.5
通讯作者：
Wei Zhipeng
中科院分区：
文献类型：
--
作者：
Zhu Xiaotian;Lin Fengyuan;Chen Xiaoyao;Zhang Zhihong;Chen Xue;Wang Dengkui;Tang Jilong;Fang Xuan;Fang Dan;Liao Lei;Wei Zhipeng
在半导体纳米线（NW）光电探测器中，由金属和半导体之间的接触形成的肖特基势垒可以充当耗尽层。对于具有较小直径的NW结构，耗尽区对载流子输运尤其重要。制备了GaAs/AlGaAs量子阱NW光电探测器，其中GaAs和AlGaAs内层形成的二维空穴管（2DHT）对载流子的调控起着重要作用。通过调节偏置电压来改变耗尽区的深度，我们已经证实了耗尽区在2DHT中的影响。在1.5 V处的响应-电压曲线中发现了一个显著的拐点。与纯GaAs NW光电探测器相比，通过结合耗尽区和2DHT，所制造的器件的响应率增加了18倍，达到0.199 AW-1，探测率增加了5倍，达到5.8× 1010 Jones。耗尽层和2DHT的合理组合有利于提高NW光电探测器的性能。
In semiconductor nanowire (NW) photodetectors, the Schottky barrier formed by the contact between metal and semiconductor can act as a depletion layer. For NW structures with a smaller diameter, the depletion region is especially important to the carrier transport. We prepared a GaAs/AlGaAs quantum well NW photodetector with a two-dimensional electron-hole tube, in which the two-dimensional hole tube (2DHT) formed by the inner layer of GaAs and AlGaAs has the most important role in the regulation of carriers. By adjusting the bias voltage to vary the depth of the depletion region, we have confirmed the influence of the depletion region in a 2DHT. A significant inflection point was found in the responsivity-voltage curve at 1.5 V. By combining the depletion region and 2DHT, the responsivity of the fabricated device was increased by 18 times to 0.199 AW− 1 and the detectivity is increased by 5 times to 5.8× 10 10 Jones, compared to the pure GaAs NW photodetector. Reasonable combination of depletion layer and 2DHT was proved to promote high-performance NW photodetector.