Metal-Insulator Transition and Scaling for Incommensurate Systems
Metal-Insulator Transition and Scaling for Incommensurate Systems
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DOI：
10.1103/physrevlett.51.1198
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发表时间：
1983-09
影响因子：
8.6
通讯作者：
M. Kohmoto
中科院分区：
文献类型：
--
作者：
M. Kohmoto
研究了具有非公度势的一维紧束缚模型。对于正弦势模型的频谱标度的数值发现在临界点，分离的区域中，所有的状态被扩展和所有的状态被本地化的区域。通用电位的缩放的情况下，表明存在的迁移率边缘。在临界点处定义了一个指数$\ensuremath{\delta}$，它表征了允许能量的总宽度的行为。对于一类不连续势，系统总是临界的。
Tight-binding models in one dimension with incommensurate potentials are studied. For the sinusoidal-potential model scaling of the spectrum is found numerically at the critical point, which separates the region where all the states are extended and the region where all the states are localized. Absence of scaling for generic potentials indicates the existence of mobility edges. An index $\ensuremath{\delta}$, which characterizes the behavior of the total width of allowed energies, is defined at the critical point. For a class of discontinuous potentials, the systems are found to be always critical.