K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering
K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering
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DOI：
10.1088/1361-6668/ac8025
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发表时间：
2022-09-01
影响因子：
3.6
通讯作者：
Yamamoto, Akiyasu
中科院分区：
文献类型：
--
作者：
Qin, Dongyi;Iida, Kazumasa;Yamamoto, Akiyasu
在MgO衬底上实现了K掺杂Ba_（122）（Ba_（1-x）K（x）Fe_2As_2）超导体的分子束外延。显微结构观察表明，未掺杂的Ba 122作为一个完美的缓冲层的K掺杂Ba 122的外延生长。该薄膜具有39.8 K的高临界温度和3.9 MA cm（-2）的高临界电流密度。外延薄膜的成功生长将使在氧化物双晶衬底上的人工单晶界成为可能，并揭示了K掺杂Ba_（122）的晶界输运性质。
Molecular beam epitaxy of K-doped Ba122 (Ba1-x K (x) Fe2As2) superconductor was realized on an MgO substrate. Microstructural observation revealed that the undoped Ba122 served as a perfect buffer layer for epitaxial growth of the K-doped Ba122. The film exhibited a high critical temperature of 39.8 K and a high critical current density of 3.9 MA cm(-2) at 4 K. The successful growth of epitaxial thin film will enable artificial single grain boundary on oxide bicrystal substrates and reveal the grain boundary transport nature of K-doped Ba122.