Ferroelectric Domain Wall Memristor
Ferroelectric Domain Wall Memristor
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DOI：
10.1002/adfm.202000109
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发表时间：
2020-05-13
影响因子：
19
通讯作者：
Gregg, J. Marty
中科院分区：
文献类型：
--
作者：
McConville, James P. V.;Lu, Haidong;Gregg, J. Marty
一个域壁使能忆阻器创建，在薄膜锂离子电池电容器，这表明高达12个数量级的电阻变化。这种剧烈的变化是由注入强烈倾斜的导电铁电畴壁引起的，它为电极之间的电流流动提供了管道。改变施加的电场脉冲的幅度，用于诱导开关，改变极化反转发生的程度;这系统地改变注入的铁电层中的导电畴壁的密度，从而改变整个电容器结构的电阻率。可以产生数百种不同的电导状态，在矫顽电压附近实现电流最大值，其中畴壁密度最大，并且最小值与几乎完全切换的铁电体（很少的畴壁）相关联。值得注意的是，这种“畴壁忆阻器”表现出塑性效应：当施加一系列恒定幅度的电压脉冲时，电阻发生变化。电阻可塑性开辟了一条道路，域壁忆阻器被认为是人工突触的神经形态电路中的应用。
A domain wall-enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are caused by the injection of strongly inclined conducting ferroelectric domain walls, which provide conduits for current flow between electrodes. Varying the magnitude of the applied electric-field pulse, used to induce switching, alters the extent to which polarization reversal occurs; this systematically changes the density of the injected conducting domain walls in the ferroelectric layer and hence the resistivity of the capacitor structure as a whole. Hundreds of distinct conductance states can be produced, with current maxima achieved around the coercive voltage, where domain wall density is greatest, and minima associated with the almost fully switched ferroelectric (few domain walls). Significantly, this "domain wall memristor" demonstrates a plasticity effect: when a succession of voltage pulses of constant magnitude is applied, the resistance changes. Resistance plasticity opens the way for the domain wall memristor to be considered for artificial synapse applications in neuromorphic circuits.