Direct Growth of Edge-Rich Graphene with Tunable Dielectric Properties in Porous Si3N4 Ceramic for Broadband High-Performance Microwave Absorption
Direct Growth of Edge-Rich Graphene with Tunable Dielectric Properties in Porous Si3N4 Ceramic for Broadband High-Performance Microwave Absorption
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在多孔 Si3N4 陶瓷中直接生长具有可调介电性能的富边缘石墨烯,用于宽带高性能微波吸收
DOI:
10.1002/adfm.201707205
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发表时间:
2018
影响因子:
19
通讯作者:
Li Hejun
中科院分区:
文献类型:
--
作者:
Ye Fang;Song;Qiang;Zhang Zhenchuang;Li Wei;Zhang Shouyang;Yin Xiaowei;Zhou Yuzhao;Tao Huiwen;Liu Yongsheng;Cheng Laifei;Zhang Litong;Li Hejun
High‐performance graphene microwave absorption materials are highly desirable in daily life and some extreme situations. A simple technique for the direct growth of graphene as absorption fillers in wave‐transmitting matrices is of paramount importance to bring it to real‐world application. Herein, a simple chemical vapor deposition (CVD) route for the direct growth of edge‐rich graphene (ERG) with tailored structures and tunable dielectric properties in porous Si3N4ceramics using only methyl alcohol (CH3OH) as precursor is reported. The large O/C atomic ratio of CH3OH helps to build a mild oxidizing atmosphere and leads to a unique structure featuring open graphite nanosteps and freestanding nanoplanes, endowing the ERG/Si3N4hybrid with an appropriate balance between good impedance matching and strong loss capacity. Accordingly, the prepared materials exhibit superior electromagnetic wave absorption, far surpassing that of traditional CVD graphene and reduced graphene oxide‐based materials, achieving an effective absorption bandwidth of 4.2 GHz covering the entire X band, with a thickness of 3.75 mm and a negligibly low loading content of absorbents. The results provide new insights for developing novel microwave absorption materials with strong reflection loss and wide absorption frequency range.