Intrinsic terahertz plasmon signatures in chemical vapour deposited graphene
Intrinsic terahertz plasmon signatures in chemical vapour deposited graphene
复制标题
DOI：
10.1063/1.4821157
复制
发表时间：
2013-09
影响因子：
4
通讯作者：
S. Badhwar;J. Šibík;P. Kidambi;H. Beere;J. Zeitler;S. Hofmann;D. Ritchie
中科院分区：
文献类型：
--
作者：
S. Badhwar;J. Šibík;P. Kidambi;H. Beere;J. Zeitler;S. Hofmann;D. Ritchie
通过将化学气相沉积(CVD)生长的石墨烯选通到较高的载流子浓度，可以实现太赫兹(THz)频率的等离子体激元共振。这种门控单层石墨烯的THz时域光谱在1.6THz附近表现出共振特征，当石墨烯以静电p掺杂时出现吸收峰，当石墨烯n掺杂时表现为增强透过率。叠加在石墨烯的Drude类频率响应上，这些共振特征与CVD石墨烯固有的多晶性有关。对这些特性的了解对于未来基于CVD石墨烯的THz光学元件的发展是必要的。
Plasmonic resonance at terahertz (THz) frequencies can be achieved by gating graphene grown via chemical vapour deposition (CVD) to a high carrier concentration. THz time domain spectroscopy of such gated monolayer graphene shows resonance features around 1.6 THz, which appear as absorption peaks when the graphene is electrostatically p-doped and change to enhanced transmission when the graphene is n-doped. Superimposed on the Drude-like frequency response of graphene, these resonance features are related to the inherent poly-crystallinity of CVD graphene. An understanding of these features is necessary for the development of future THz optical elements based on CVD graphene.