KF addition to Cu2SnS3 thin films prepared by sulfurization process
KF addition to Cu2SnS3 thin films prepared by sulfurization process
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DOI：
10.7567/jjap.56.04cs02
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发表时间：
2016-07
影响因子：
1.5
通讯作者：
M. Nakashima;J. Fujimoto;T. Yamaguchi;J. Sasano;M. Izaki
中科院分区：
文献类型：
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作者：
M. Nakashima;J. Fujimoto;T. Yamaguchi;J. Sasano;M. Izaki
采用氟化硫硫化法制备了Cu 2SnS 3薄膜，并将其应用于光伏器件。采用了两段退火和四层前驱体两种方法，并改变了NaF和KF的用量以及退火温度。通过电子探针显微分析（EPMA），发现Cu/Sn摩尔比的范围为0.81至1.51。X射线衍射（XRD）和拉曼光谱分析表明，制备的薄膜具有单斜Cu 2SnS 3结构。通过两阶段退火制备的Cu 2SnS 3薄膜具有紧密堆积的结构和无针孔的表面形貌。这项研究中最好的太阳能电池显示Voc为293 mV，超过了之前报道的值。
Cu2SnS3 thin films were fabricated by sulfurization with KF addition and applied to photovoltaic devices. Two methods, two-stage annealing and the use of four-layer precursors, were employed, and the quantity of NaF and KF and the annealing temperature were changed. By electron probe microanalysis (EPMA), the Cu/Sn mole ratio was found to range from 0.81 to 1.51. The X-ray diffraction (XRD) patterns and Raman spectra indicated that the fabricated thin films had a monoclinic Cu2SnS3 structure. The Cu2SnS3 thin films fabricated by two-stage annealing had a close-packed structure and a pinhole-free surface morphology. The best solar cell in this study showed Voc of 293 mV, which surpassed the previously reported value.