Carrier-envelope-offset phase control of ultrafast optical rectification in resonantly excited semiconductors.
Carrier-envelope-offset phase control of ultrafast optical rectification in resonantly excited semiconductors.
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DOI：
10.1103/physrevlett.98.167404
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发表时间：
2007-04
影响因子：
8.6
通讯作者：
C. Van Vlack;S. Hughes
中科院分区：
文献类型：
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作者：
C. Van Vlack;S. Hughes
在谐振光整流的范围内研究了半导体中的超短脉冲光-物质相互作用。使用约1.5-3.5 pi的脉冲包络面积，证明了5秒脉冲持续时间内对载波包络偏移相位（CEP）的单次依赖。利用薄膜砷化镓的参数，预测了几种不同频率下的特征相图。我们随后提出了一种可能的技术来提取CEP，在符号和幅度，使用固体探测器。
Ultrashort pulse light-matter interactions in a semiconductor are investigated within the regime of resonant optical rectification. Using pulse envelope areas of around 1.5-3.5 pi, a single-shot dependence on carrier-envelope-offset phase (CEP) is demonstrated for 5 fs pulse durations. A characteristic phase map is predicted for several different frequency regimes using parameters for thin-film GaAs. We subsequently suggest a possible technique to extract the CEP, in both sign and amplitude, using a solid state detector.