Hydrothermal synthesis of macroscopic nitrogen-doped graphene hydrogels for ultrafast supercapacitor

Hydrothermal synthesis of macroscopic nitrogen-doped graphene hydrogels for ultrafast supercapacitor
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用于超快超级电容器的宏观氮掺杂石墨烯水凝胶的水热合成

DOI:
10.1016/j.nanoen.2012.09.003
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发表时间:
2013-03-01
期刊:
影响因子:
17.6
通讯作者:
Yu, Shu-Hong
Yu, Shu-Hong
中科院分区:
材料科学1区
文献类型:
--
作者:
Chen, Ping;Yang, Jing-Jing;Yu, Shu-Hong

文献摘要

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氮掺杂石墨烯是近年来的研究热点。进一步利用石墨烯宏观组装体的优异性能是至关重要的。在此,我们首先报道了一种独特而方便的用于氮掺杂石墨烯水凝胶(GN-GH)的控制合成和结构调整的水热方法,该方法可以容易地放大用于通过使用有机胺和氧化石墨烯作为前体的氮掺杂石墨烯水凝胶的大规模生产。有机胺不仅可以作为氮源来制备氮掺杂石墨烯,而且可以作为一种重要的修饰剂来控制石墨烯片在三维结构中的组装。GN-GH的内部结构和石墨烯中的氮含量容易通过有机胺调节。有趣的是,已经发现典型产品的超级电容器性能可以显著增强。即使在185.0 A/g的超快充放电速率下,也可以获得205.0 kW/kg的高功率密度。另外,在100.0A/g的电流密度下,其电容保持95.2%持续4000次循环。本发明的氮掺杂的石墨烯水凝胶可以在高速率下作为车辆、电梯和其他设备中的高功率密度电容器具有潜在的应用。(C)2013由Elsevier Ltd.出版
Nitrogen-doped graphene has been a recent research focus. It is crucial to further utilize the excellent properties of graphene macroscopic assemblies. Herein, we first report a unique and convenient hydrothermal process for controlled synthesis and structural adjustment of the nitrogen-doped graphene hydrogel (GN-GH), which can be readily scaled-up for mass production of nitrogen-doped graphene hydrogel by using organic amine and graphene oxide as precursors. The organic amine is not only as nitrogen sources to obtain the nitrogen-doped graphene but also as an important modification to control the assembly of graphene sheets in the 3D structures. Inner structure of the GN-GHs and the content of nitrogen in the graphene are easily adjusted by organic amine. Interestingly, it has been found that the supercapacitor performance of the typical product could be remarkably enhanced. Even at an ultrafast charge/discharge rate of 185.0 A/g, a high power density of 205.0 kW/kg can be obtained. In addition, at a current density of 100.0 A/g, 95.2% of its capacitance was retained for 4000 cycles. The present nitrogen-doped graphene hydrogels may have potential applications as ultrahigh power density capacitors in the vehicle, lift and the other devices at high rates. (C) 2013 Published by Elsevier Ltd.