Highly scalable non-volatile and ultra-lowpower phase-change nanowire memory
Highly scalable non-volatile and ultra-lowpower phase-change nanowire memory
复制标题
DOI：
10.1038/nnano.2007.291
复制
发表时间：
2007-10-01
影响因子：
38.3
通讯作者：
Agarwal, Ritesh
中科院分区：
文献类型：
--
作者：
Lee, Se-Ho;Jung, Yeonwoong;Agarwal, Ritesh
对结合快速读写速度、高存储密度和非易失性的通用存储器存储设备的研究正在推动对纳米结构形式的新材料的探索（1-7）。相变材料，它可以在非晶态和晶态之间可逆地切换，在这方面是有前途的，但这些材料的自上而下的加工成纳米结构往往会损害其有用的性能（4，5）。自组装的基于锗的相变材料存储器器件提供了一种有吸引力的解决方案，这是由于它们的亚光刻尺寸和独特的几何形状，再加上可以制造它们的容易的无蚀刻工艺。在这里，我们探讨了纳米尺度对自组装Ge 2Sb 2 Te 5纳米线，一种重要的相变材料的存储能力的影响。我们在这些设备中的writecurrent振幅，开关速度，耐久性和数据保留时间的测量表明，这种纳米线是有前途的非易失性可扩展存储器的构建块，并可能代表在探索电流诱导的相变在纳米级系统的最终尺寸限制。
The search for a universal memory storage device that combines rapid read and write speeds, high storage density and non-volatility is driving the exploration of new materials in nanostructured form(1-7). Phase-change materials, which can be reversibly switched between amorphous and crystalline states, are promising in this respect, but top-down processing of these materials into nanostructures often damages their useful properties(4,5). Self-assembled nanowire-based phase-change material memory devices offer an attractive solution owing to their sub-lithographic sizes and unique geometry, coupled with the facile etch-free processes with which they can be fabricated. Here, we explore the effects of nanoscaling on the memorystorage capability of self-assembled Ge2Sb2Te5 nanowires, an important phase-change material. Our measurements of writecurrent amplitude, switching speed, endurance and data retention time in these devices show that such nanowires are promising building blocks for non-volatile scalable memory and may represent the ultimate size limit in exploring current-induced phase transition in nanoscale systems.