Field-emission studies on thin films of zinc oxide nanowires
Field-emission studies on thin films of zinc oxide nanowires
复制标题
DOI：
10.1063/1.1631735
复制
发表时间：
2003-12-08
影响因子：
4
通讯作者：
Fourkas, JT
中科院分区：
文献类型：
--
作者：
Jo, SH;Lao, JY;Fourkas, JT
对氧化锌纳米线薄膜的场致发射（FE）进行了研究，发现ZnO纳米线的面密度决定了其导通电压和发射电流密度。ZnO纳米线的密度由沉积在硅衬底上的金（Au）纳米粒子密度控制。采用热蒸发/冷凝法制备ZnO纳米线。结果表明，在碳纳米管场致发射体上观察到的相同屏蔽效应也会影响ZnO纳米线薄膜的FE。面密度最低的ZnO纳米线薄膜具有较好的FE特性，可与碳纳米管相媲美。更重要的是，在氢气中退火进一步改善了ZnO纳米线薄膜的FE特性。(C) 2003年美国物理研究所。
Studies on field emission (FE) from thin films of zinc oxide (ZnO) nanowires found that both the turn-on voltage and emission current density depend on the areal density of nanowires. The density of ZnO nanowires is controlled by the gold (Au) nanoparticle density deposited on the silicon substrates. The growth of ZnO nanowires was achieved by the thermal evaporation/condensation method. It is shown that the same screening effect observed on carbon nanotube field emitters also affects the FE from thin films of ZnO nanowires. Thin films with the lowest areal density of ZnO nanowires showed much better FE characteristics, comparable to that of carbon nanotubes. More importantly, the FE characteristics of ZnO nanowire thin film were further improved with annealing in hydrogen. (C) 2003 American Institute of Physics.