A 12-GHz DPDT RF-MEMS Switch with Layer-Wise Waveguide/Actuator Design Technique
A 12-GHz DPDT RF-MEMS Switch with Layer-Wise Waveguide/Actuator Design Technique
复制标题
采用分层波导/执行器设计技术的 12 GHz DPDT RF-MEMS 开关
DOI：
10.1109/memsys.2009.4805526
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
H. Toshiyoshi
中科院分区：
文献类型：
--
作者：
D. Yamane;H. Seita;W. Sun;S. Kawasaki;H. Fujita;H. Toshiyoshi
提出了一种用于12 GHz移相器的双刀双掷（DPDT）RF-MEMS开关的新设计，通过将信号波导和静电致动器分别布置在SOI晶片的不同层中，减小了它们之间的电串扰。与以往的报道相比，我们的设计可以在芯片上使用相对较大的面积，以容纳更多的静电驱动器和有更多的电接地层。利用这种新开发的方法，硅RF-MEMS器件将能够克服固态器件在性能、器件尺寸和成本方面的缺点。在12 GHz时，驱动电压为4V，开关速度为12微秒，插入损耗为3dB，回波损耗为12 dB，隔离度为30 dB。
A novel design of double-pole double-throw (DPDT) RF-MEMS switch for 12-GHz phase shifter has been developed to minimize the electrical crosstalk between the signal waveguide and electrostatic actuator by allocating them in separate layers of an SOI wafer. Compared with the previous other reports, our design can use relatively large area on the chip to accommodate more electrostatic actuator and to have more electrical ground planes. With this newly developed method, silicon RF-MEMS devices will be able to overcome the drawback of solid-state devices in terms of performance, device size, and cost. This paper reports driving voltage of 4V with the switching speed of 12 microseconds, insertion loss of 3 dB, return loss of 12 dB, isolation of 30dB at 12 GHz.