Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation
Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation
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DOI：
10.1109/led.2009.2029532
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发表时间：
2009-10-01
影响因子：
4.9
通讯作者：
Kuzmik, Jan
中科院分区：
文献类型：
--
作者：
Ostermaier, Clemens;Pozzovivo, Gianmauro;Kuzmik, Jan
我们提出了GaN基高电子迁移率晶体管（HEMT）与2 nm薄的InAlN/AlN势垒覆盖高掺杂n（++）GaN。帽层的选择性蚀刻导致具有+0.7 V的阈值电压的良好可控的势垒增强模式器件。n（++）GaN层在HEMT接入区中提供290 Ω/平方的薄层电阻，并且消除了通过脉冲IV测量的电流分散，而不需要额外的表面钝化。栅长为0.5 μ m的器件的最大漏极电流为800 mA/mm，最大漏极电流为400 mS/mm，电流截止频率f（T）为33.7 GHz。此外，我们还展示了在同一晶片上的耗尽型器件，为可再生的高性能InAlN数字集成电路开辟了前景。
We present GaN-based high electron mobility transistors (HEMTs) with a 2-nm-thin InAlN/AlN barrier capped with highly doped n(++) GaN. Selective etching of the cap layer results in a well-controllable ultrathin barrier enhancement-mode device with a threshold voltage of +0.7 V. The n(++) GaN layer provides a 290-Omega/square sheet resistance in the HEMT access region and eliminates current dispersion measured by pulsed IV without requiring additional surface passivation. Devices with a gate length of 0.5-mu m exhibit maximum drain current of 800 mA/mm, maximum transconductance of 400 mS/mm, and current cutoff frequency f(T) of 33.7 GHz. In addition, we demonstrate depletion-mode devices on the same wafer, opening up perspectives for reproducible high-performance InAlN-based digital integrated circuits.