Electron-tunneling operation of single-dopant-atom transistors at elevated temperature -Toward room temperature operation-

Electron-tunneling operation of single-dopant-atom transistors at elevated temperature -Toward room temperature operation-
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单掺杂原子晶体管在高温下的电子隧道操作-走向室温操作-

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通讯作者:
Michiharu Tabe
Michiharu Tabe
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作者:
Daniel Moraru;Earfan Hamid;Arup Samanta;Le The Anh;Takeshi Mizuno;Hiroshi Mizuta;Michiharu Tabe

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