Photoluminescence of Si nanocrystals under selective excitation
Photoluminescence of Si nanocrystals under selective excitation
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DOI：
10.1016/j.jpcs.2008.11.013
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发表时间：
2009-02-01
影响因子：
4
通讯作者：
Reipa, V.
中科院分区：
文献类型：
--
作者：
Dobrovolskas, D.;Mickevicius, J.;Reipa, V.
研究了不同烷烃（己烷、辛烷和十三烷）钝化硅纳米晶体的室温光致发光性能。结果表明，钝化所用烷烃的碳链长度对发射带形状没有影响。在共振激发下，观察到由150 ~ 160 meV间隔峰组成的明显的光致发光带的精细结构。除了先前报道的具有“神奇”数量的Si原子的纳米晶体外，具有特定稳定尺寸/形状的Si纳米晶体基团的主要贡献解释了这种结构。利用选择性共振光激发，揭示了这些稳定纳米晶体在离散能谱中的高能态的贡献。(C) 2008 Elsevier Ltd版权所有。
Photoluminescence of Si nanocrystals passivated by different alkanes (hexane, octane, and tridecane) was studied at room temperature. It is shown that the emission band shape is not affected by the length of the carbon chain in the alkanes used for passivation. A pronounced fine structure of the photoluminescence band consisting of peaks separated by 150-160 meV was observed under resonant excitation. The structure is interpreted by predominant contribution from Si nanocrystal groups with particular stable size/shape existing in addition to the previously reported nanocrystals with "magic" numbers of Si atoms. The contribution of these stable nanocrystals is revealed using selective resonant photoexcitation to the higher energy states in the discrete energy spectrum of such nanocrystals. (C) 2008 Elsevier Ltd. All rights reserved.