Hydrogen implantation‐induced large area exfoliation in AlN epitaxial layers
Hydrogen implantation‐induced large area exfoliation in AlN epitaxial layers
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氢注入引起AlN外延层大面积剥离
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
R. Singh
中科院分区：
文献类型：
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作者：
U. Dadwal;R. Scholz;Pratik Kumar;D. Kanjilal;Silke Christiansen;U. Gösele;R. Singh
对生长在2英寸c面(0001)蓝宝石衬底上的氮化铝(AlN)外延层进行了氢离子注入，注入流量范围为1 × 1017-2 × 1017/cm~2，注入温度范围为液氮~300 °C。我们的研究表明，注入液氮和室温(RT)的AlN样品在注入后的退火热处理后，主要表现为表面起泡。而在100和300 °C注入的氮化铝样品在注入后退火后出现了大面积的剥离。用横截面电子显微镜分析了注入引起的AlN损伤，发现在所有的情况下，AlN层内都有一个损伤带，并且填充了氢气的纳米空洞。100和300 °C注入的样品在注入状态下，这些纳米空洞更倾向于聚集在一起形成纳米裂纹，最终导致高温热处理后的大面积剥离。
Hydrogen ion implantation in aluminium nitride (AlN) epitaxial layers grown on 2‐inch c‐plane (0001) sapphire substrates was performed with different fluences in the range of 1 × 1017–2 × 1017/cm2 at various implantation temperatures between liquid nitrogen (LN2) to 300 °C. The post‐implantation thermal annealing behaviour of these samples was studied by using optical microscopy, atomic force microscopy (AFM) and transmission electron microscopy (TEM). Our investigations showed that AlN samples that were implanted at LN2 and room temperature (RT) exhibited mostly surface blistering after post‐implantation annealing. On the other hand, the AlN samples that were implanted at 100 and 300 °C showed large area exfoliation of the implanted surface after post‐implantation annealing. The implantation‐induced damage in AlN was analysed by cross‐sectional TEM, which revealed a damage band inside the AlN layer in all the cases that was decorated with hydrogen‐filled nanovoids. These nanovoids showed a greater tendency of agglomerating together to form nanocracks in the as‐implanted state for 100 and 300 °C implanted samples leading eventually to the large area exfoliation after high temperature annealing.