Characterization of Thin Films with X-ray Total Reflection Technology
Characterization of Thin Films with X-ray Total Reflection Technology
复制标题
利用 X 射线全反射技术表征薄膜
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
H. Tomita
中科院分区：
文献类型：
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作者：
S. Komiya;N. Awaji;Y. Horii;H. Tomita
介绍了x射线全反射薄膜的特性。用掠入射x射线衍射研究了钛硅石薄膜。低温退火后，在大量注入BF2离子的Si（001）衬底上形成外延C49- tisi2晶粒，并抑制了高温退火过程中C49向C54的相变。用x射线反射率分析研究了SiO2薄膜。热氧化物具有厚度为-1 nm的高密度界面层。硅上极薄的天然氧化物也具有化学清洗溶液的作用。
Characterization of thin films with x-ray total reflection is introduced. Titanium silicite thin films are studied by grazing incidence x-ray diffraction. The epitaxial C49-TiSi2 grains are formed on heavily BF2 ion implanted Si (001) substrate after low temperature annealing, and they suppress the phase transition from C49 to C54 during high temperature annealing. SiO2 thin films are investigated by x-ray reflectivity analysis. Thermal oxides have always the high density interface layer of -1 nm in thickness. Extremely thin native oxides on Si is also characterized in a function of chemical cleaning solutions.