Measurement of mean inner potential and inelastic mean free path of ZnO nanowires and nanosheet
Measurement of mean inner potential and inelastic mean free path of ZnO nanowires and nanosheet
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DOI：
10.1088/2053-1591/2/10/105003
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发表时间：
2015-10
影响因子：
2.3
通讯作者：
Z. Gan;Seung-Hyuck Ahn;Hongbin Yu;David J. Smith;M. McCartney
中科院分区：
文献类型：
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作者：
Z. Gan;Seung-Hyuck Ahn;Hongbin Yu;David J. Smith;M. McCartney
采用化学气相沉积法生长了ZnO纳米线和ZnO纳米片。使用透射电子显微镜表征NW结构，而使用离轴电子全息术测量的200 keV电子的平均内电势和非弹性平均自由程分别为15.3 ± 0.2 V和55 ± 3 nm。然后将这些值用于表征ZnO纳米片的厚度，并给出了一致的结果。这项研究表明，电子全息术可以提供有关纳米结构ZnO材料和器件的有用信息。
ZnO nanowires (NWs) and ZnO nano-sheets were grown using the chemical vapor deposition method. The NW structure was characterized using transmission electron microscopy, while the mean inner potential and inelastic mean free path for 200 keV electrons were measured using off-axis electron holography to be 15.3 ± 0.2 V and 55 ± 3 nm, respectively. These values were then used to characterize the thickness of a ZnO nano-sheet, and gave consistent results. This study demonstrates that electron holography can provide useful information about nanostructured ZnO materials and devices.