Mott-Anderson Transition in Molecular Conductors: Influence of Randomness on Strongly Correlated Electrons in the κ-(BEDT-TTF)2X System
Mott-Anderson Transition in Molecular Conductors: Influence of Randomness on Strongly Correlated Electrons in the κ-(BEDT-TTF)2X System
复制标题
分子导体中的莫特-安德森跃迁：随机性对 κ-(BEDT-TTF)2X 系统中强相关电子的影响
DOI：
10.3390/cryst2020374
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Takahiko Sasaki
中科院分区：
文献类型：
--
作者：
Takahiko Sasaki
Mott-Anderson转变由于强的电子-电子相互作用和电子的随机性而被称为金属-绝缘体（MI）转变。例如，掺杂半导体和过渡金属氧化物中的MI跃迁到目前为止已经被研究为Mott-Anderson跃迁的典型例子，其用于通过载流子数控制改变电子相关性，同时具有不可避免的随机性。另一方面，分子导体被认为是典型的具有带宽控制的Mott跃迁的强关联电子系统。本文介绍了我们最近对基于BEDT-TTF分子的有机导体中强关联电子的无规性效应的研究。对晶体的X射线照射在绝缘阴离子层中引入分子缺陷，这导致导电BEDT-TTF层中的相关电子的随机电势调制。结合流体静压，我们能够控制接近莫特-安德森转变的电子的随机性和相关性的参数。
The Mott-Anderson transition has been known as a metal-insulator (MI) transition due to both strong electron-electron interaction and randomness of the electrons. For example, the MI transition in doped semiconductors and transition metal oxides has been investigated up to now as a typical example of the Mott-Anderson transition for changing electron correlations by carrier number control in concurrence with inevitable randomness. On the other hand, molecular conductors have been known as typical strongly correlated electron systems with bandwidth controlled Mott transition. In this paper, we demonstrate our recent studies on the randomness effect of the strongly correlated electrons of the BEDT-TTF molecule based organic conductors. X-ray irradiation on the crystals introduces molecular defects in the insulating anion layer, which cause random potential modulation of the correlated electrons in the conductive BEDT-TTF layer. In combination with hydrostatic pressure, we are able to control the parameters for randomness and correlations for electrons approaching the Mott-Anderson transition.
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DOI：
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发表时间：
2019
期刊：
影响因子：
--
作者：
土屋 聡;桑江良太;児玉 匠;戸田 泰則;中村 祐介;栗原芽来美;山本 貴,内藤俊雄
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山本 貴,内藤俊雄
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DOI：
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发表时间：
2008
期刊：
Phys. Rev. B 77
影响因子：
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DOI：
--
发表时间：
2007
期刊：
J. Phys. Soc. Jpn. 76
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作者：
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DOI：
--
发表时间：
2007
期刊：
影响因子：
--
作者：
A. Kanda;et. al.;A. Kanda;神田晶申;R. Furugen;A. Kanda;神田晶申;古堅亮;R. Furugen;古堅亮;R. Furugen;古堅亮;R. Furugen;A. Kanda;A. Kanda;神田晶申;A. Kanda;R. Furugen;A. Kanda;A. Kanda;A. Kanda;A. Kanda;B. J. Baelus;A. Kanda;A. Kanda;A. Kanda;A. Kanda;A. Kanda;A. Kanda;A. Kanda;A. Kanda;B. J. Baelus;A. Kanda;A. Kanda;A. Kanda;A. Kanda;A. Kanda;A Kanda;T. Sasaki;T. Sasaki et. al.;T. Sasaki;M. Teramura;L. Yin;M. Urano;T. Sasaki;N. Yoneyama;佐々木孝彦;M. Teramura et. al.;L. Yin et. al.;M. Urano et. al.;T. Sasaki et. al.;N. Yoneyama et. al.;T. Sasaki;T. Sasaki;H. Oizumi;N. Yoneyama;T. Nakanishi;N. Matsunaga;M. Teramura;M. Teramura;T. Sasaki et. al.;H. Oizumi et. al.;N. Yoneyama et. al.;T. Nakanishi et. al.;N. Matsunaga et. al.;M. Teramura et. al.;M. Teramura et. al.;T. Sasaki;T.Sasaki;H.Oizumi;N.Yoneyama;M.Teramura;T.Nakanishi;N.Matsunaga;T. Sasaki;N. Yoneyama;F.L. Pratt;K. Oshima;N. Matsunaga;T. Sasaki et. al.;N. Yoneyama et. al.;F. L. Pratt et. al.;K. Oshima et. al.;N. Matsunaga et. al.;H.Tou;T.Sasaki;F.L.Pratt;K.Oshima;N.Yoneyama;T.Rachi;佐々木孝彦;T. Sasaki;佐々木孝彦;米山直樹;N. Yoneyama;T. Sasaki;T. Sasaki;T. Sasaki;H. Qizumi;N. Yoneyama;H. Oizumi;N. Yoneyama;佐々木孝彦;T. Sasaki
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有机莫特绝缘体κ-(BEDT-TTF)2Cu[N(CN)2]Cl中的非费米液体行为及其掺杂不对称性
DOI：
--
发表时间：
2019
期刊：
影响因子：
--
作者：
川椙義高;関和弘;蒲江;竹延大志;柚木清司;山本浩史;加藤礼三
通讯作者：
加藤礼三