Characterization of tantalum nitride films deposited by reactive sputtering of Ta in N2/Ar gas mixtures
Characterization of tantalum nitride films deposited by reactive sputtering of Ta in N2/Ar gas mixtures
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DOI：
10.1016/s0254-0584(00)00370-9
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发表时间：
2001-02
影响因子：
4.6
通讯作者：
Wen-Horng Lee;Jing‐Cheng Lin;Chiapyng Lee
中科院分区：
文献类型：
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作者：
Wen-Horng Lee;Jing‐Cheng Lin;Chiapyng Lee
