One-dimensional Schottky contact between ErSi2 nanowire and Si(001)
One-dimensional Schottky contact between ErSi2 nanowire and Si(001)
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DOI：
10.1063/1.2207492
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发表时间：
2006-06
影响因子：
4
通讯作者：
O. Kubo;Y. Shingaya;M. Aono;T. Nakayama
中科院分区：
文献类型：
--
作者：
O. Kubo;Y. Shingaya;M. Aono;T. Nakayama
我们测量了ErSi_2纳米线与Si（001）衬底之间形成的纳米肖特基接触的电学性质。通过使扫描隧道显微镜尖端接触纳米线来进行电流与电压（I-V）测量。通过ErSi 2 scinSi（001）界面的电流密度（J）随着纳米线宽度的减小而增大，而纳米线长度的变化对电流密度的影响不明显。通过拟合标准肖特基方程得到的J-V曲线的理想因子估计。我们的结果表明，隧道分量增加的宽度的纳米线变得更小。
We have measured the electric properties of nanosized Schottky contacts formed between ErSi2 nanowires (NWs) and a Si(001) substrate. Current vs voltage (I-V) measurement was performed by touching a scanning tunneling microscope tip to the NWs. The current density (J) through the ErSi2∕Si(001) interface increased as the width of the NWs decreased, while no significant changes were observed upon changing the length of the NWs. The ideality factor was estimated by fitting the standard Schottky equation to the obtained J-V curves. Our results suggest that the tunneling component increases as the width of the NWs becomes smaller.