High-quality multilayer graphene on an insulator formed by diffusion controlled Ni-induced layer exchange
High-quality multilayer graphene on an insulator formed by diffusion controlled Ni-induced layer exchange
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DOI：
10.1063/1.5010982
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发表时间：
2017-12-11
影响因子：
4
通讯作者：
Toko, K.
中科院分区：
文献类型：
--
作者：
Murata, H.;Saitoh, N.;Toko, K.
Ni诱导的无定形碳的层交换生长是用于直接在绝缘体上制备均匀多层石墨烯（MLG）的独特方法。为了提高MLG的晶体质量，我们在非晶C和Ni层之间制备AlOx或SiO2中间层，其控制C原子扩散到Ni层中的程度。从MLG层交换形成的生长形态和观察到的拉曼光谱强烈依赖于材料类型和厚度的夹层; 1 nm厚的AlOx夹层被发现是理想的实验中使用。透射电子显微镜和电子能量损失谱表明，所得MLG的晶体质量远高于没有中间层的样品。晶粒尺寸达到几μ m，导致1290 S/cm的电导率。晶粒尺寸和电导率是最高的MLG中使用固相反应，包括金属诱导结晶合成。在任意衬底上直接合成均匀、高质量的MLG将为先进的电子器件与碳材料集成铺平道路。出版社：AIP Publishing
The Ni-induced layer-exchange growth of amorphous carbon is a unique method used to fabricate uniform multilayer graphene (MLG) directly on an insulator. To improve the crystal quality of MLG, we prepare AlOx or SiO2 interlayers between amorphous C and Ni layers, which control the extent of diffusion of C atoms into the Ni layer. The growth morphology and Raman spectra observed from MLG formed by layer exchange strongly depend on the material type and thickness of the interlayers; a 1-nm-thick AlOx interlayer is found to be ideal for use in experiments. Transmission electron microscopy and electron energy-loss spectra reveal that the crystal quality of the resulting MLG is much higher than that of a sample without an interlayer. The grain size reaches a few mu m, leading to an electrical conductivity of 1290 S/cm. The grain size and the electrical conductivity are the highest among MLG synthesized using a solid-phase reaction including metal-induced crystallization. The direct synthesis of uniform, high-quality MLG on arbitrary substrates will pave the way for advanced electronic devices integrated with carbon materials. Published by AIP Publishing.