Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy
Measurement of the effective electron mass in GaInNAs by energy-loss spectroscopy
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DOI：
10.1063/1.1650906
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发表时间：
2004-03-01
影响因子：
4
通讯作者：
Chalker, PR
中科院分区：
文献类型：
--
作者：
Gass, MH;Papworth, AJ;Chalker, PR
利用专用场发射枪扫描电子显微镜上的电子能量损失光谱仪，对GaInNAs/GaAs量子阱的电子结构进行了成像研究。Kramers-Kronig对单个散射低损耗区的分析得出了联合有效价电子密度的一个量度。平均电子密度被用来直接测量GaInNAs的电子有效质量。对于7 nm厚的Ga0.9In0.1N0.04As0.96量子阱，折合质量为0.0874m(0)。(C)2004年美国物理研究所。
Imaging of the electronic structure of a GaInNAs/GaAs quantum well has been investigated by mapping the variation in the plasmon frequency using an electron energy-loss spectrometer on a dedicated field emission gun scanning transmission electron microscope. Kramers-Kronig analysis of the single scattered low-loss region yields a measure of the joint effective valence electron density. The average electron density has been used to provide a direct measurement of the electron effective mass of GaInNAs. The reduced mass was found to be 0.0874m(0) for a 7 nm thick Ga0.9In0.1N0.04As0.96 quantum well. (C) 2004 American Institute of Physics.