Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation

Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation
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通过时间分辨克尔旋转研究 (Ga,Mn)As 中的自旋弛豫和移相机制

DOI:
10.1063/1.3116716
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发表时间:
2009-04
影响因子:
4
通讯作者:
Zhao, Jianhua
Zhao, Jianhua
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Zhu, Yonggang;Zhang, Xinhui;Li, Tao;Chen, Lin;Lu, Jun;Zhao, Jianhua

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利用时间分辨磁光克尔效应研究了在GaAs(001)上生长的(Ga,Mn)As薄膜的自旋动力学。在没有外加磁场的情况下,(Ga,Mn)As的Kerr信号衰减时间为几百皮秒,表明光极化空穴与磁性离子耦合为一个铁磁系统。弛豫与脱相(R&D)时间与Larmor频率的非单调温度依赖关系表明,低温下birr - aronov - pikus机制主导自旋研发时间,高温下D 'yakonov-Perel机制主导自旋研发时间,两种机制的交点为居里温度。
Spin dynamics in (Ga,Mn)As films grown on GaAs(001) was investigated by Time-resolved magneto-optical Kerr effect. The Kerr signal decay time of (Ga,Mn)As without external magnetic field applied was found to be several hundreds picoseconds, which suggested that photogenerated polarized holes and magnetic ions are coupled as a ferromagnetic system. Nonmonotonic temperature dependence of relaxation and dephasing (R&D) time and Larmor frequency manifests that Bir–Aronov–Pikus mechanism dominates the spin R&D time at low temperature, while D’yakonov–Perel mechanism dominates the spin R&D time at high temperature, and the crossover between the two regimes is Curie temperature.
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