The phase transition of BaTiO3 thin film on Pt/MgO substrate
The phase transition of BaTiO3 thin film on Pt/MgO substrate
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DOI：
10.1088/0953-8984/12/39/314
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发表时间：
2000-10
期刊：
影响因子：
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通讯作者：
Y. Yoneda;K. Sakaue;H. Terauchi
中科院分区：
文献类型：
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作者：
Y. Yoneda;K. Sakaue;H. Terauchi
采用活化反应蒸发法在MgO衬底上生长了厚度为67 A的BaTiO3外延晶体。晶格参数用x射线衍射表征。晶体的四边形远高于体晶，生长层受到外延效应的应变。进行了热测量以澄清薄晶体的相变。在140°C时观察到明显的热异常，表明BaTiO3发生了相变。这是第一次观察到如此薄的BaTiO3晶体的相变。我们从外延效应的角度讨论了相变的要求。
Epitaxial crystals of BaTiO3 with thickness of 67 A were grown on MgO substrate with a Pt electrode by the activated reactive evaporation method. The lattice parameter was characterized by x-ray diffraction. The tetragonality of the crystal was much higher than that of the bulk crystal and the growth layer was strained by the epitaxial effect. Thermal measurements were performed to clarify the phase transition of the thin crystal. A clear thermal anomaly was observed at 140 °C that suggests a phase transition of BaTiO3. This is the first observation of a phase transition of such a thin crystal of BaTiO3. We discuss the requirements for a phase transition in terms of the epitaxial effect.