Simulating the Radiation Response of GaAs Solar Cells Using a Defect-Based TCAD Model
Simulating the Radiation Response of GaAs Solar Cells Using a Defect-Based TCAD Model
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DOI：
10.1109/tns.2013.2273446
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发表时间：
2013-08
影响因子：
1.8
通讯作者：
M. Turowski;T. Bald;A. Raman;A. Fedoseyev;J. Warner;C. Cress;R. Walters
中科院分区：
文献类型：
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作者：
M. Turowski;T. Bald;A. Raman;A. Fedoseyev;J. Warner;C. Cress;R. Walters
三维TCAD模拟用于基于物理的预测的空间辐射效应在III-V族太阳能电池，并与实验测量的p+ n GaAs太阳能电池与AlGaAs窗口的特性进行比较。计算了不同注量下2 MeV质子辐照的暗态和亮态I-V曲线以及相应的性能参数，并与实验数据进行了比较。我们分析了多数和少数载流子陷阱在太阳能电池性能退化中的作用。在模拟中使用的陷阱/缺陷参数，为n型和p型GaAs，来自深能级瞬态谱（DLTS）的数据。基于物理的模型允许模拟结果和实验数据之间的良好匹配。然而，假设器件性能由单个复合中心主导不足以完全捕获控制光伏性能的退化机制。
Three-dimensional TCAD simulations are used for physics-based prediction of space radiation effects in III-V solar cells, and compared with experimentally measured characteristics of a p+ n GaAs solar cell with AlGaAs window. Dark and illuminated I-V curves as well as corresponding performance parameters are computed and compared with experimental data for 2 MeV proton irradiation at various fluences. We analyze the role of majority and minority carrier traps in the solar cell performance degradation. The traps/defects parameters used in the simulations, for n-type and p-type GaAs, are derived from Deep Level Transient Spectroscopy (DLTS) data. The physics-based models allow a good match between simulation results and experimental data. However, assuming the device performance is dominated by a single recombination center is not adequate to completely capture the degradation mechanisms controlling the photovoltaic performance.