Domain state model for exchange bias.: I.: Theory -: art. no. 014430
Domain state model for exchange bias.: I.: Theory -: art. no. 014430
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DOI：
10.1103/physrevb.66.014430
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发表时间：
2002-07-01
影响因子：
3.7
通讯作者：
Güntherodt, G
中科院分区：
文献类型：
--
作者：
Nowak, U;Usadel, KD;Güntherodt, G
对于一个模型系统组成的铁磁层耦合到一个稀释，反铁磁层进行广泛的蒙特卡罗模拟。交换偏置被观察到作为结果的反铁磁层中的域状态，该域状态在场冷却期间发展，携带不可逆的域状态的磁化。与最近的实验观察Co/CoO双层膜的强烈依赖的反铁磁稀释的交换偏置场被发现，它表明，各种典型的影响与交换偏置，如正偏置，温度和时间的依赖关系，以及反铁磁层的厚度的依赖关系，可以解释在我们的模型。
For a model system consisting of a ferromagnetic layer coupled to a diluted, antiferromagnetic layer extensive Monte Carlo simulations are performed. Exchange bias is observed as a result of a domain state in the antiferromagnetic layer which develops during field cooling, carrying an irreversible domain state's magnetization. In agreement with recent experimental observations on Co/CoO bilayers a strong dependence of the exchange bias field on dilution of the antiferromagnet is found and it is shown that a variety of typical effects associated with exchange bias, such as positive bias, temperature, and time dependencies as well as the dependence on the thickness of the antiferromagnetic layer can be explained within our model.