Possible explanation of the contradictory results on the porous silicon photoluminescence evolution after low temperature treatments
Possible explanation of the contradictory results on the porous silicon photoluminescence evolution after low temperature treatments
复制标题
低温处理后多孔硅光致发光演化的矛盾结果的可能解释
DOI：
10.1016/s0169-4332(96)00687-3
复制
发表时间：
1997
影响因子：
6.7
通讯作者：
B. Gelloz
中科院分区：
文献类型：
--
作者：
B. Gelloz
通过使用红外光谱分析表面化学成分，研究了 300°C 低水平热氧化后多孔硅光致发光 (PL) 的改性。氧化物的量是定量测定的。研究了两种不同孔隙率的多孔硅：70% 和 80%。在 70% 孔隙率多孔层的情况下，这种热处理导致在氧掺入的早期阶段显着增强 PL，随后在较高氧化水平下降解，而 80% 孔隙率多孔层的光致发光仅下降。展示了这种新的分析如何解释各种低温氧化过程下 PL 行为的不同且常常相互矛盾的结果。
The modification of the porous silicon photoluminescence (PL) after a low level thermal oxidation at 300°C is studied by analyzing the surface chemical composition using infra-red spectroscopy. The amount of oxide is determined quantitatively. Two different porosities of porous silicon are studied: 70% and 80%. In the case of the 70% porosity porous layer, this thermal process leads to an important PL enhancement in the early stages of oxygen incorporation followed by a degradation at higher oxidation levels whereas the photoluminescence of the 80% porosity porous layer only decreases. It is shown how this new analysis can account for the different and often contradictory results on the PL behavior under various low-temperature oxidation processes.