Ultralow-Energy Boron-Ion Implantation of Silicon
Ultralow-Energy Boron-Ion Implantation of Silicon
复制标题
硅的超低能硼离子注入
DOI：
10.1143/jjap.47.23
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
H. Itoh
中科院分区：
文献类型：
--
作者：
Kazuhiro Yamamoto;H. Itoh
采用质量分离11B+离子束对（001）硅表面进行了超低能离子注入；离子的能量为30 eV或200 eV。研究了注入条件对电学性能的影响。在能量为200 eV时，随着靶温度的升高，硼注入后的薄片电阻降低，这是因为引入的空位和间隙等缺陷较少。当离子剂量大于0.5×1016 ions/cm2时，能量为30 eV注入后的片材电阻达到6 kΩ/□的饱和状态。在0.51×1016离子/cm2和1.03×1016离子/cm2注入后，掺杂剂的活化率分别为61%和46%，这是因为在较高剂量下，硼离子被引入到硅的间隙位置。硼的注入深度为1.2 nm。这些结果表明，30 eV的超低能离子束可以实现超浅离子掺杂。
An ultralow-energy ion implantation of a (001) silicon surface was carried out using a mass-separated 11B+ ion beam; the ions had an energy of either 30 or 200 eV. The effect of implantation conditions on electrical properties was investigated. The sheet resistance after boron implantation at an energy of 200 eV decreased with an increase in target temperature because fewer defects, such as interstitials and vacancies, were introduced. The sheet resistance after implantation at an energy of 30 eV saturated at a value of 6 kΩ/□ at an ion dose of more than 0.5×1016 ions/cm2. The activation ratios of the dopant after implantation at 0.51×1016 and 1.03×1016 ions/cm2 were 61 and 46%, respectively, because at the higher dose, boron ions were introduced into the interstitial sites of silicon. The implantation depth of boron was 1.2 nm. These results show that ultrashallow ion doping can be achieved with ultralow-energy ion beams at 30 eV.