Extended homogeneous nanoripple formation during interaction of high-intensity few-cycle pulses with a moving silicon wafer
Extended homogeneous nanoripple formation during interaction of high-intensity few-cycle pulses with a moving silicon wafer
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DOI：
10.1007/s00339-012-7430-4
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发表时间：
2013-08
期刊：
影响因子：
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通讯作者：
R. Ganeev;D. Lei;C. Hutchison;T. Witting;F. Frank;W. Okell;T. Roschuk;S. A. Maier;J. Tisch;J. Marangos
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文献类型：
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作者：
R. Ganeev;D. Lei;C. Hutchison;T. Witting;F. Frank;W. Okell;T. Roschuk;S. A. Maier;J. Tisch;J. Marangos
我们报告的研究过程中形成的高强度3.5 fs脉冲与移动的硅片相互作用的扩展nanopple结构。通过优化激光强度（8× 1013 W cm-2）和样品移动速度（1 mm s-1），可以在整个激光烧蚀区域形成沿着分布的长条状（约5 mm）均匀纳米波纹。比较了几个周期和多个周期的脉冲在硅表面上产生的纳米波纹。我们发现，几个周期的脉冲比多周期脉冲产生尖锐和更均匀的结构。
We report the study of extended nanoripple structures formed during the interaction of high-intensity 3.5 fs pulses with a moving silicon wafer. The optimization of laser intensity (8×1013W cm−2) and sample moving velocity (1 mm s−1) allowed the formation of long strips (∼5 mm) of homogeneous nanoripples along the whole area of laser ablation. The comparison of nanoripples produced on the silicon surfaces by few- and multi-cycle pulses is presented. We find that few-cycle pulses produce sharp and more homogenous structures than multi-cycle pulses.