High Frequency Ni-NiO-Ag Metal-Insulator-Metal Tunnel Diodes Fabricated via Anodic Aluminum Oxide Templates
High Frequency Ni-NiO-Ag Metal-Insulator-Metal Tunnel Diodes Fabricated via Anodic Aluminum Oxide Templates
复制标题
通过阳极氧化铝模板制造的高频 Ni-NiO-Ag 金属-绝缘体-金属隧道二极管
DOI：
10.1149/2.0021505ssl
复制
发表时间：
2015
影响因子：
--
通讯作者：
Deren Yang
中科院分区：
文献类型：
--
作者：
Chongyuan Zhuang;Lei Wang;D. Zhun;Deren Yang
采用电化学沉积法制备了Ni-NiO-Ag金属-绝缘体-金属（MIM）二极管，其接触面积被阳极氧化铝模板的纳米通道限制在3.1× 10− 4 μ m2。通过热氧化生长的NiO绝缘层，其特征在于平均厚度为6 nm，如通过透射电子显微镜（TEM）所揭示的。MIM二极管显示出高度非对称和非线性的IV特性，最大响应度为8.5 V− 1，零偏响应度为5.8 V− 1，这表明其在高频应用中具有巨大的潜力。
The Ni-NiO-Ag Metal-Insulator-Metal (MIM) diodes were fabricated via electrochemical deposition, whose contact area was restricted to be 3.1× 10− 4 μm 2 by the nanochannels of anodic aluminum oxide templates. The NiO insulating layer featuring an average thickness of 6 nm was grown by thermal oxidation, as revealed by transmission electron microscopy (TEM). The MIM diodes show a highly asymmetric and nonlinear IV characteristic, with a maximum responsivity of 8.5 V− 1 and a zero-bias responsivity of 5.8 V− 1, suggesting its great potential for high frequency application.