Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test
Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test
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DOI：
10.35848/1347-4065/abebc1
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发表时间：
2021-03
影响因子：
1.5
通讯作者：
Z. Lou;W. Saito;S. Nishizawa
中科院分区：
文献类型：
--
作者：
Z. Lou;W. Saito;S. Nishizawa
在非箝位电感开关（UIS）试验中，由于击穿电压的变化，并联SiC MOSFET中的电流会出现不平衡现象，这可以看作是固态断路器的紧急开断。不平衡的电流可以驱动设备进入热破坏。本研究评估了可接受的击穿电压变化的两个并联连接的SiC MOSFET在不同的总电流，负载电感，和击穿电压温度系数的条件下，在UIS模式操作的数值模拟。在298 K的可接受的变化被认为是随着总电流的增加而减少，并受到总电流的变化的影响，更大的电感。还阐明了具有较大击穿电压温度系数的SiC MOSFET，允许较大的变化。
Current flowing through parallel-connected SiC MOSFETs are imbalanced during unclamped inductive switching (UIS) test, which can be imaged as the emergency interruption of solid-state circuit breakers, due to variations of breakdown voltage. The imbalanced current can drive devices into thermal destruction. This study evaluated acceptable breakdown voltage variations of two parallel-connected SiC MOSFETs under different total current, load inductances, and breakdown voltage temperature coefficient conditions during UIS mode operation by numerical simulation. The acceptable variation at 298 K was found to decrease with increasing total current and be influenced by the change of total current greater with larger inductances. SiC MOSFETs with larger breakdown voltage temperature coefficients allowing larger variations were also clarified.