Bias influence on ionizing radiation effects for 3CG130 PNP bipolar junction transistors
Bias influence on ionizing radiation effects for 3CG130 PNP bipolar junction transistors
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DOI：
10.1016/j.nima.2011.12.011
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发表时间：
2012-04
影响因子：
1.4
通讯作者：
Chaoming Liu;Xingji Li;Hongbin Geng;De-zhuang Yang;S. He
中科院分区：
文献类型：
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作者：
Chaoming Liu;Xingji Li;Hongbin Geng;De-zhuang Yang;S. He
为了评价偏压条件对PNP双极结型晶体管（BJT）电离辐射效应的影响，对3CG 130 PNP BJTs在不同偏压条件下进行了110 keV电子辐照，并在辐照过程中测量了不同电学参数。根据实验结果，可以清楚地看出，偏压条件影响PNP BJT的电离损伤水平，这是由110 keV电子辐照引起的。在给定的辐照能量密度下，发射极-基极结反向/正向偏压下的PNP晶体管比零偏压下的PNP晶体管表现出更大/更小的退化。
In order to evaluate the influence of bias conditions on ionizing radiation effects for PNP bipolar junction transistors (BJTs), the 110keV electrons' irradiations were performed and different electrical parameters were measured in-situ for 3CG130 PNP BJTs with different bias conditions during the exposure. Based on the experimental results, it is clear that the bias condition affects the ionization damage level on PNP BJTs, which is caused by 110keV electrons' irradiations. The PNP transistors under reverse/forward bias of emitter–base junction exhibit greater/lower degradation than those under zero bias at a given irradiation fluence.